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JANS1N5617

JANS1N5617

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Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

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JANS1N5617

JANS1N5617

Active
Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

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Description

General part information

JANS1N5617

Diode 400 V 1A Through Hole A, Axial

Technical Specifications

Parameters and characteristics for this part

SpecificationJANS1N5617
Current - Average Rectified (Io)1 A
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)200 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseA, Axial
Package NameA, Axial
Qualification429, MIL-PRF-19500
Reverse Recovery Time (trr)150 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max)1.6 V

Pricing

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