1SS384TE85LF

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Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 10V 100MA USQ

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Active

Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 10V 100MA USQ

Technical Specifications

Parameters and characteristics for this part

Specification	1SS384TE85LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-82
Speed	Any Speed
Speed	200 mA
Supplier Device Package	USQ
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V
Voltage - Forward (Vf) (Max) @ If	500 mV

DIODE ARR SCHOTT 10V 100MA USQ

Part	Mounting Type	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Technology	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Operating Temperature - Junction
Toshiba Semiconductor and Storage 1SS384TE85LF	Surface Mount	SC-82	20 µA	500 mV	USQ	100 mA	Schottky	Any Speed	200 mA	10 V	2 Independent	125 °C

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General part information

Diode Array 2 Independent 10 V 100mA Surface Mount SC-82

Technical documentation and resources