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NTMYS5D3N04CTWG

NTMYS5D3N04CTWG

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ON Semiconductor

POWER MOSFET, SINGLE N-CHANNEL, 40 V, 5.3 MOHM, 71 A

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NTMYS5D3N04CTWG

NTMYS5D3N04CTWG

Active
ON Semiconductor

POWER MOSFET, SINGLE N-CHANNEL, 40 V, 5.3 MOHM, 71 A

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Description

General part information

NTMYS5D3N04CTWG

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMYS5D3N04CTWG
Current - Continuous Drain (Id) (Ta)19 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)16 nC
Input Capacitance (Ciss) (Max)1000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case4-LFPAK, SOT-1023
Package Length5 mm
Package NameLFPAK4
Package Width6 mm
Power Dissipation (Max)3.6 W, 50 W
Rds On (Max)5.3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

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CAD

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