IRF7805ZTRPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL ; SO-8 PACKAGE; 6.8 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL ; SO-8 PACKAGE; 6.8 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7805ZTRPBF

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	2080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	6.8 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.25 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF7805ZTRPBF	27 nC	MOSFET (Metal Oxide)	2.5 W	8-SO	8-SOIC	3.9 mm	0.154 in	2080 pF	N-Channel	20 V	4.5 V 10 V	-55 °C	150 °C	Surface Mount	2.25 V	30 V	6.8 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly