ACGRAT102-HF

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Comchip Technology

DIODE GEN PURP 400V 1A 2010

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Comchip Technology

DIODE GEN PURP 400V 1A 2010

Technical Specifications

Parameters and characteristics for this part

Specification	ACGRAT102-HF

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	2010 (5025 Metric)
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	2010
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 400V 1A 2010

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Qualification	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case
Comchip Technology ACGRAT102-HF	5 µA	400 V	Automotive	Standard	175 ░C	-65 C	200 mA, 500 ns	1 V	2010	Surface Mount	AEC-Q101	1 A	8 pF	2010 (5025 Metric)

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General part information

Diode 400 V 1A Surface Mount 2010

Technical documentation and resources

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