IRF9204PBF

Obsolete

Infineon Technologies

MOSFET P-CH 40V 56A TO220AB

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Obsolete

Infineon Technologies

MOSFET P-CH 40V 56A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9204PBF

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	224 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7676 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	143 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRF9204PBF	TO-220-3	16 mOhm	3 V	MOSFET (Metal Oxide)	7676 pF	143 W	20 V	P-Channel	TO-220AB	-55 °C	175 ░C	4.5 V 10 V	40 V	Through Hole	56 A	224 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$