H11A817B
ObsoleteON Semiconductor
OPTOISO 5.3KV TRANSISTOR 4DIP
H11A817B
ObsoleteON Semiconductor
OPTOISO 5.3KV TRANSISTOR 4DIP
Description
General part information
H11A817B
Optoisolator Transistor Output 5300Vrms 1 Channel 4-DIP
Technical Specifications
Parameters and characteristics for this part
| Specification | H11A817B |
|---|---|
| Current - DC Forward (If) (Max) | 50 mA |
| Current - Output / Channel | 50 mA |
| Current Transfer Ratio (Max) | 260 % |
| Current Transfer Ratio (Min) | 130 % |
| Fall Time (Typ) | 2.4 µs |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -55 °C |
| Output Type | Transistor |
| Package Length | 0.3 in |
| Package Name | 4-DIP |
| Package Width | 7.62 mm |
| Rise Time (Typ) | 2.4 µs |
| Vce Saturation (Max) | 200 mV |
| Voltage - Forward (Vf) (Typ) | 1.2 V |
| Voltage - Isolation | 5.3 kV |
| Voltage - Output (Max) | 70 V |
Pricing
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CAD
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Documents
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