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DMG2307LQ-7 - ONSEMI BAS40LT1G

DMG2307LQ-7

Active
Diodes Inc

MOSFET, P-CH, 30V, 2.5A, SOT-23 ROHS COMPLIANT: YES

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DMG2307LQ-7 - ONSEMI BAS40LT1G

DMG2307LQ-7

Active
Diodes Inc

MOSFET, P-CH, 30V, 2.5A, SOT-23 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMG2307LQ-7
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds371.3 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)760 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.10
Digi-Reel® 1$ 0.36
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.10
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
NewarkEach (Supplied on Cut Tape) 1$ 0.45
10$ 0.29
25$ 0.26
50$ 0.23
100$ 0.20
250$ 0.19
500$ 0.18
1000$ 0.18

Description

General part information

DMG2307LQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.