CDBDSC10650-G

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Comchip Technology

DIODE SCHOTTKY SIC 650V 33A 3-PIN(2+TAB) DPAK TUBE

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Comchip Technology

DIODE SCHOTTKY SIC 650V 33A 3-PIN(2+TAB) DPAK TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	CDBDSC10650-G

Capacitance @ Vr, F	690 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE SCHOTTKY SIC 650V 33A 3-PIN(2+TAB) DPAK TUBE

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If
Comchip Technology CDBDSC10650-G	No Recovery Time	650 V	100 µA	10 A	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab), SC-63, TO-252-3	0 ns	Surface Mount	DPAK	690 pF	175 ░C	-55 C	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 10A Surface Mount DPAK

Technical documentation and resources

No documents available