
IRLI610ATU
ObsoleteON Semiconductor
MOSFET N-CH 200V 3.3A I2PAK

IRLI610ATU
ObsoleteON Semiconductor
MOSFET N-CH 200V 3.3A I2PAK
Description
General part information
IRLI610ATU
N-Channel 200 V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole TO-262 (I2PAK)
Technical Specifications
Parameters and characteristics for this part
| Specification | IRLI610ATU |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3.3 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9 nC |
| Input Capacitance (Ciss) (Max) | 240 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | TO-262 (I2PAK) |
| Power Dissipation (Max) | 33 W, 3.1 W |
| Rds On (Max) | 1.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available