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ISL9N302AS3

IRLI610ATU

Obsolete
ON Semiconductor

MOSFET N-CH 200V 3.3A I2PAK

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ISL9N302AS3

IRLI610ATU

Obsolete
ON Semiconductor

MOSFET N-CH 200V 3.3A I2PAK

Find alt

Description

General part information

IRLI610ATU

N-Channel 200 V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole TO-262 (I2PAK)

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLI610ATU
Current - Continuous Drain (Id) (Tc)3.3 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)9 nC
Input Capacitance (Ciss) (Max)240 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameTO-262 (I2PAK)
Power Dissipation (Max)33 W, 3.1 W
Rds On (Max)1.5 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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