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S1G-KR2G - PE1DAH

S1G-KR2G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO214AC

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S1G-KR2G - PE1DAH

S1G-KR2G

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO214AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationS1G-KR2G
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)1500 ns
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-214AC (SMA)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

S1G Series

Diode 400 V 1A Surface Mount DO-214AC (SMA)

Documents

Technical documentation and resources