2N5598
ActiveGeneral Semiconductor
LOW FREQUENCY SILICON POWER NPN
2N5598
ActiveGeneral Semiconductor
LOW FREQUENCY SILICON POWER NPN
Description
General part information
2N5598
Bipolar (BJT) Transistor PNP 60 V 2 A 20 W Through Hole TO-66 (TO-213AA)
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5598 |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-66-2, TO-213AA |
| Package Name | TO-66 (TO-213AA) |
| Power - Max | 20 W |
| Supplier Device Package | TO-66, TO-213AA |
| Transistor Type | PNP |
| Vce Saturation (Max) | 850 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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