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MPS6602G

MPS6602G

Obsolete
ON Semiconductor

SMALL SIGNAL AMPLIFIER NPN

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MPS6602G

MPS6602G

Obsolete
ON Semiconductor

SMALL SIGNAL AMPLIFIER NPN

Find alt

Description

General part information

MPS6602G

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationMPS6602G
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)50
Frequency - Transition100 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-92-3 Long Body, TO-226-3
Package NameTO-92 (TO-226)
Power - Max625 mW
Transistor TypeNPN
Vce Saturation (Max)600 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part