NVMFD6H852NLWFT1G
ActiveTRANS MOSFET N-CH 80V 7A AUTOMOTIVE AEC-Q101 8-PIN DFN EP T/R
NVMFD6H852NLWFT1G
ActiveTRANS MOSFET N-CH 80V 7A AUTOMOTIVE AEC-Q101 8-PIN DFN EP T/R
Description
General part information
NVMFD6H852NLWFT1G
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFD6H852NLWFT1G |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 7 A |
| Current - Continuous Drain (Id) (Tc) | 25 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 10 nC, 10 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 521 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length (8-DFN) | 5 mm |
| Package Name | Dual Flag, 8-DFN, SO8FL-Dual |
| Package Width (8-DFN) | 6 mm |
| Power Dissipation (Max) | 3.2 W, 38 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 25.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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