HER303GA-G

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Comchip Technology

DIODE GEN PURP 200V 3A DO27

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Comchip Technology

DIODE GEN PURP 200V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	HER303GA-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-27
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 200V 3A DO27

Part	Speed	Package / Case	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If
Comchip Technology HER303GA-G	200 mA, 500 ns	Axial, DO-201AA, DO-27	Standard	Through Hole	150 °C	-55 °C	DO-27	5 µA	3 A	200 V	50 ns	1 V

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General part information

Diode 200 V 3A Through Hole DO-27

Technical documentation and resources

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