STW11NB80

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STMicroelectronics

MOSFET N-CH 800V 11A TO247-3

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STMicroelectronics

MOSFET N-CH 800V 11A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW11NB80

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 800V 11A TO247-3

Part	FET Type	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
STMicroelectronics STW11NB80	N-Channel	30 V	Through Hole	2900 pF	70 nC	TO-247-3	800 V	10 V	800 mOhm	190 W	TO-247-3	150 °C	MOSFET (Metal Oxide)	11 A	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 11A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources