AO4852

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 3A 8SOIC

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO4852

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Alpha & Omega Semiconductor Inc. AO4852	90 mOhm	8-SOIC	2 N-Channel (Dual)	-55 °C	150 °C	MOSFET (Metal Oxide)	1.4 W	8-SOIC	3.9 mm	0.154 in	Surface Mount	Logic Level Gate	450 pF	2.6 V	3 A	60 V	9.2 nC
Alpha & Omega Semiconductor Inc. AO4852L	90 mOhm	8-SOIC	2 N-Channel (Dual)	-55 °C	150 °C	MOSFET (Metal Oxide)	1.4 W	8-SOIC	3.9 mm	0.154 in	Surface Mount	Logic Level Gate	450 pF	2.6 V	3 A	60 V	9.2 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 3A 1.4W Surface Mount 8-SOIC

Technical documentation and resources