IRFR1018ETRPBF

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Infineon Technologies

MOSFET, N-CH, 60V, 79A, TO-252AA ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 60V, 79A, TO-252AA ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR1018ETRPBF

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	69 nC
Input Capacitance (Ciss) (Max) @ Vds	2290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	8.4 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]
Infineon Technologies IRFR1018ETRPBF	Surface Mount	2290 pF	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	8.4 mOhm	69 nC	TO-252AA (DPAK)	56 A	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	60 V	10 V	20 V	110 W

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