FDMD84100
ObsoleteDUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100V, 21A, 20MΩ
FDMD84100
ObsoleteDUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100V, 21A, 20MΩ
Description
General part information
FDMD84100
This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMD84100 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Max) | 16 nC |
| Input Capacitance (Ciss) (Max) | 980 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.3 mm |
| Package Name | Power |
| Package Width | 5 mm |
| Power - Max | 2.1 W |
| Rds On (Max) | 20 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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