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DMN2028UVT-13 - Package Image for TSOT26

DMN2028UVT-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

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DMN2028UVT-13 - Package Image for TSOT26

DMN2028UVT-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2028UVT-13
Current - Continuous Drain (Id) @ 25°C6.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]8.3 nC
Input Capacitance (Ciss) (Max) @ Vds856 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)1.2 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackageTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.10
20000$ 0.10
30000$ 0.09
50000$ 0.09

Description

General part information

DMN2028UFDF Series

N-Channel Enhancement Mode MOSFET