
DMN2028UVT-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN2028UVT-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2028UVT-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 856 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power Dissipation (Max) | 1.2 W |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Supplier Device Package | TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.10 | |
| 20000 | $ 0.10 | |||
| 30000 | $ 0.09 | |||
| 50000 | $ 0.09 | |||
Description
General part information
DMN2028UFDF Series
N-Channel Enhancement Mode MOSFET
Documents
Technical documentation and resources