DMG1026UVQ-7
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMG1026UVQ-7
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMG1026UVQ-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 440 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.45 pC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 32 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 650 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 1.8 Ohm |
| Supplier Device Package | SOT-563 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.55 | |
| 10 | $ 0.34 | |||
| 100 | $ 0.22 | |||
| 500 | $ 0.16 | |||
| 1000 | $ 0.15 | |||
| Digi-Reel® | 1 | $ 0.55 | ||
| 10 | $ 0.34 | |||
| 100 | $ 0.22 | |||
| 500 | $ 0.16 | |||
| 1000 | $ 0.15 | |||
| Tape & Reel (TR) | 3000 | $ 0.12 | ||
| 6000 | $ 0.11 | |||
| 9000 | $ 0.11 | |||
| 15000 | $ 0.10 | |||
| 21000 | $ 0.10 | |||
| 30000 | $ 0.09 | |||
| 75000 | $ 0.09 | |||
Description
General part information
DMG1026UVQ Series
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources