
P1000B
ActiveDiotec Semiconductor
DIODE GEN PURP 100V 10A P600

P1000B
ActiveDiotec Semiconductor
DIODE GEN PURP 100V 10A P600
Description
General part information
P1000B
Diode 100 V 10A Through Hole P-600
Technical Specifications
Parameters and characteristics for this part
| Specification | P1000B |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -50 °C |
| Package / Case | Axial, P600 |
| Package Name | P-600, P600 |
| Reverse Recovery Time (trr) | 1500 ns |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 1.05 V |
Pricing
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CAD
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Documents
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