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STW80NF06 - TO-247-3 HiP

STW80NF06

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STMicroelectronics

MOSFET N-CH 60V 80A TO247-3

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STW80NF06 - TO-247-3 HiP

STW80NF06

Active
STMicroelectronics

MOSFET N-CH 60V 80A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationSTW80NF06STW80N Series
Drain to Source Voltage (Vdss)60 V55 - 60 V
Drive Voltage (Max Rds On, Min Rds On)10 V10 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3850 pF3850 pF
Mounting TypeThrough HoleThrough Hole
Operating Temperature175 °C175 °C
Operating Temperature--55 °C
Operating Temperature-175 ░C
Package / CaseTO-247-3TO-247-3
Power Dissipation (Max) [Max]300 W300 W
Supplier Device PackageTO-247-3TO-247-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)20 V20 V
Vgs(th) (Max) @ Id4 V4 V

STW80N Series

MOSFET N-CH 55V 80A TO247-3

PartGate Charge (Qg) (Max) @ VgsMounting TypeDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)TechnologyDrain to Source Voltage (Vdss)FET TypeOperating Temperature [Min]Operating Temperature [Max]Vgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]Package / CaseSupplier Device PackageOperating Temperature
STMicroelectronics
STW80NF55-08
150 nC
Through Hole
10 V
20 V
MOSFET (Metal Oxide)
55 V
N-Channel
-55 °C
175 ░C
4 V
3850 pF
300 W
TO-247-3
TO-247-3
STMicroelectronics
STW80NF06
150 nC
Through Hole
10 V
20 V
MOSFET (Metal Oxide)
60 V
N-Channel
4 V
3850 pF
300 W
TO-247-3
TO-247-3
175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

STW80N Series

N-Channel 60 V 80A (Tc) 300W (Tc) Through Hole TO-247-3

Documents

Technical documentation and resources