1SS389,H3F

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA ESC

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA ESC

Technical Specifications

Parameters and characteristics for this part

Specification	1SS389,H3F

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-79, SOD-523
Speed	Any Speed
Speed	200 mA
Supplier Device Package	ESC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	600 mV

DIODE SCHOTTKY 40V 100MA ESC

Part	Operating Temperature - Junction	Speed	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type	Current - Average Rectified (Io)	Package / Case	Capacitance @ Vr, F
Toshiba Semiconductor and Storage 1SS389,H3F	125 °C	Any Speed	200 mA	5 µA	ESC	40 V	600 mV	Schottky	Surface Mount	100 mA	SC-79, SOD-523	25 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 40 V 100mA Surface Mount ESC

Technical documentation and resources

No documents available