BYW29ED-200,118

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 200V 8A DPAK

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 200V 8A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	BYW29ED-200,118

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	DPAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If
WeEn Semiconductors Co., Ltd BYW29EX-200,127	200 mA 500 ns	25 ns	10 µA	Through Hole	150 °C	1.05 V	200 V	Standard	8 A	TO-220FP	TO-220-2 Full Pack Isolated Tab
WeEn Semiconductors Co., Ltd BYW29E-100,127	200 mA 500 ns	25 ns	10 µA	Through Hole	150 °C	1.05 V	100 V	Standard	8 A	TO-220AC	TO-220-2
WeEn Semiconductors Co., Ltd BYW29ED-200,118	200 mA 500 ns	25 ns	10 µA	Surface Mount	150 °C		200 V	Standard	8 A	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.3 V
WeEn Semiconductors Co., Ltd BYW29E-200,127	200 mA 500 ns	25 ns	10 µA	Through Hole	150 °C	1.05 V	200 V	Standard	8 A	TO-220AC	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 8A Surface Mount DPAK

Technical documentation and resources

No documents available