
BYC30B-600PJ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 30A D2PAK
Deep-Dive with AI
Search across all available documentation for this part.

BYC30B-600PJ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 30A D2PAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYC30B-600PJ | 
|---|---|
| Current - Average Rectified (Io) | 30 A | 
| Current - Reverse Leakage @ Vr | 10 µA | 
| Mounting Type | Surface Mount | 
| Operating Temperature - Junction [Max] | 175 °C | 
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 | 
| Reverse Recovery Time (trr) | 35 ns | 
| Speed | 200 mA, 500 ns | 
| Supplier Device Package | D2PAK | 
| Technology | Standard | 
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V | 
| Voltage - Forward (Vf) (Max) @ If | 2.75 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 5600 | $ 0.85 | |
Description
General part information
BYC30 Series
Diode 600 V 30A Surface Mount D2PAK
Documents
Technical documentation and resources
No documents available