FDN5618P
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 60 V, 1.25 A, 0.17 OHM, SUPERSOT, SURFACE MOUNT
FDN5618P
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 60 V, 1.25 A, 0.17 OHM, SUPERSOT, SURFACE MOUNT
Description
General part information
FDN5618P
The FDN5618P is a 60V P-channel MOSFET uses Fairchild's high voltage PowerTrench® process. It has been optimized for load switch and DC-to-DC converters applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDN5618P |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.25 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 13.8 nC |
| Input Capacitance (Ciss) (Max) | 430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 500 mW |
| Rds On (Max) | 170 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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