DMT3009LDV-7
ActiveDiodes Inc
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT3009LDV-7
ActiveDiodes Inc
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMT3009LDV-7
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT3009LDV-7 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Tc) | 17.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 823 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PowerDI3333-8 (Type UXC) |
| Power - Max (Ta) | 900 mW |
| Rds On (Max) | 11 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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