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MUN5237DW1T1G

MUN5237DW1T1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, DUAL NPN, 50 V, 100 MA

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MUN5237DW1T1G

MUN5237DW1T1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, DUAL NPN, 50 V, 100 MA

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Description

General part information

MUN5237DW1T1G

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Technical Specifications

Parameters and characteristics for this part

SpecificationMUN5237DW1T1G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)80
Mounting TypeSurface Mount
NPN Count2
Package / Case6-TSSOP, SC-88, SOT-363
Package NameSC-88/SC70-6/SOT-363
Power - Max187 mW
Resistor - Base (R1) Resistance47 kOhm
Resistor - Emitter Base (R2)22 kOhms
Transistor ConfigurationPre-Biased
Transistor TypeNPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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