DMT64M1LCG-7
ActiveDiodes Inc
65V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT64M1LCG-7
ActiveDiodes Inc
65V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMT64M1LCG-7
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT64M1LCG-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 16.7 A |
| Current - Continuous Drain (Id) (Tc) | 67.8 A |
| Drain to Source Voltage (Vdss) | 65 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 51.4 nC |
| Input Capacitance (Ciss) (Max) | 2626 pF, 2626 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | V-DFN3333-8 (Type B) |
| Power Dissipation (Max) | 1.2 W |
| Rds On (Max) | 0.0054 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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