IRF8113TRPBF

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 17.2 A, 0.0056 OHM, SOIC, SURFACE MOUNT

Search across all available documentation for this part.

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 17.2 A, 0.0056 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8113TRPBF

Current - Continuous Drain (Id) @ 25°C	17.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	5.6 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Infineon Technologies IRF8113TRPBF	17.2 A	2.2 V	MOSFET (Metal Oxide)	5.6 mOhm	8-SOIC	3.9 mm	0.154 in	N-Channel	Surface Mount	36 nC	30 V	2.5 W	2910 pF	20 V	4.5 V 10 V	-55 °C	150 °C	8-SO

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources