SUP25P10-138-GE3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 16.3A TO220AB

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 16.3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP25P10-138-GE3

Current - Continuous Drain (Id) @ 25°C	16.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	73.5 W, 3.1 W
Rds On (Max) @ Id, Vgs [Max]	13.8 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SUP25P10-138-GE3	-55 °C	150 °C	20 V	Through Hole	16.3 A	13.8 mOhm	MOSFET (Metal Oxide)	3.1 W 73.5 W	2100 pF	4 V	60 nC	100 V	N-Channel	TO-220AB	TO-220-3	6 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 16.3A (Tc) 3.1W (Ta), 73.5W (Tc) Through Hole TO-220AB

Technical documentation and resources