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AT45DB021E-MHN-Y

AT45DB021E-MHN-Y

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Renesas Electronics Corporation

FLASH MEMORY, 2MBIT, -40 TO 85DEG C

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AT45DB021E-MHN-Y

AT45DB021E-MHN-Y

Active
Renesas Electronics Corporation

FLASH MEMORY, 2MBIT, -40 TO 85DEG C

Find alt

Description

General part information

AT45DB021E-MHN-Y

FLASH MEMORY, 2MBIT, -40 TO 85DEG C

Technical Specifications

Parameters and characteristics for this part

SpecificationAT45DB021E-MHN-Y
Clock Frequency70 MHz
Memory Depth1024 pages
Memory FormatFLASH
Memory Interface (Type)SPI
Memory Size2 Mb
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-UDFN Exposed Pad
Package Length5 mm
Package Name8-UDFN
Package Width6 mm
Page Size264 Bytes
TechnologyFLASH
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)1.65 V
Write Cycle Time - Page3 ms
Write Cycle Time - Word8 µs

Pricing

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CAD

3D models and CAD resources for this part