DMG8601UFG-7

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Diodes Inc

20V 6.1A 920MW 20MΩ@2.5V,5.5A 2 N-CHANNEL UDFN3030-8 MOSFETS ROHS

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Diodes Inc

20V 6.1A 920MW 20MΩ@2.5V,5.5A 2 N-CHANNEL UDFN3030-8 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	DMG8601UFG-7

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	8.8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerUDFN
Power - Max [Max]	920 mW
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	U-DFN3030-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.05 V

N-Channel MOSFET

Part	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Vgs(th) (Max) @ Id	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature
Diodes Inc DMG8601UFG-7	23 mOhm	920 mW	1.05 V	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)	8.8 nC	20 V	Surface Mount	U-DFN3030-8	6.1 A	8-PowerUDFN	-55 °C	150 °C	Logic Level Gate

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General part information

N-Channel MOSFET

Technical documentation and resources