G33N03D3

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Goford Semiconductor

MOSFET 2N-CH 30V 30A 8DFN

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Goford Semiconductor

MOSFET 2N-CH 30V 30A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	G33N03D3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	16 nC, 15 nC
Input Capacitance (Ciss) (Max) @ Vds	837 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	13 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-DFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

MOSFET 2N-CH 30V 30A 8DFN

Part	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Configuration	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Goford Semiconductor G33N03D3	837 pF	13 W	15 nC, 16 nC	28 A	11 mOhm	2 N-Channel (Dual)	8-PowerVDFN	2.5 V	Surface Mount	8-DFN (3x3)	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C

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