IRFZ46NSTRLPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 16.5 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 16.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ46NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	1696 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.8 W, 107 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IRFZ46NPBF	TO-220AB	-55 °C	175 ░C	53 A	4 V	TO-220-3	20 V	72 nC	MOSFET (Metal Oxide)	16.5 mOhm	Through Hole	55 V	1696 pF	10 V	N-Channel	107 W
Infineon Technologies IRFZ46ZSTRLPBF	D2PAK	-55 °C	175 ░C	51 A	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	46 nC	MOSFET (Metal Oxide)		Surface Mount	55 V	1460 pF	10 V	N-Channel		82 W	13.6 mOhm
Infineon Technologies IRFZ46ZSTRLPBF	D2PAK	-55 °C	175 ░C	51 A	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	46 nC	MOSFET (Metal Oxide)		Surface Mount	55 V	1460 pF	10 V	N-Channel		82 W	13.6 mOhm
Infineon Technologies IRFZ46NSTRLPBF	D2PAK	-55 °C	175 ░C	53 A	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	72 nC	MOSFET (Metal Oxide)	16.5 mOhm	Surface Mount	55 V	1696 pF	10 V	N-Channel	3.8 W 107 W
Infineon Technologies IRFZ46NLPBF	TO-262	-55 °C	175 ░C	53 A	4 V	I2PAK TO-262-3 Long Leads TO-262AA	20 V	72 nC	MOSFET (Metal Oxide)	16.5 mOhm	Through Hole	55 V	1696 pF	10 V	N-Channel	3.8 W 107 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly