DMG6968UQ-7

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMG6968UQ-7

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	151 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

NRND = Not Recommended for New Design

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id	FET Feature	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMG6968UDM-7	SOT-26	6.5 A	SOT-23-6	24 mOhm	Surface Mount	850 mW	900 mV	Logic Level Gate	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	8.8 nC	2 N-Channel (Dual) Common Drain
Diodes Inc DMG6968UQ-7	SOT-23-3	6.5 A	SC-59 SOT-23-3 TO-236-3	25 mOhm	Surface Mount		900 mV		20 V	MOSFET (Metal Oxide)	-55 °C	150 °C			12 V	8.5 nC	151 pF	1.8 V 4.5 V	1.3 W	N-Channel
Diodes Inc DMG6968LSD-13		6.5 A			Surface Mount		1.5 V		20 V	MOSFET (Metal Oxide)						8.5 nC	151 pF	1.8 V 4.5 V		N-Channel	36 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.