1SS385FV,L3F

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA VESM

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA VESM

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1SS385FV,L3F	1SS385 Series

Capacitance @ Vr, F	20 pF	20 pF
Current - Average Rectified (Io)	100 mA	100 mA
Current - Reverse Leakage @ Vr	20 µA	20 µA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction	125 °C	125 °C
Package / Case	SOT-723	SC-75, SOT-416, SOT-723
Speed	Any Speed	Any Speed
Speed	200 mA	200 mA
Supplier Device Package	VESM	SSM, VESM
Technology	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V	10 V
Voltage - Forward (Vf) (Max) @ If	500 mV	500 mV

DIODE SCHOTTKY 10V 100MA SSM

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case
Toshiba Semiconductor and Storage 1SS385,LF(CT	10 V	SSM	Any Speed	200 mA	Surface Mount	Schottky	500 mV	20 µA	125 °C	100 mA	20 pF	SC-75, SOT-416
Toshiba Semiconductor and Storage 1SS385FV,L3F	10 V	VESM	Any Speed	200 mA	Surface Mount	Schottky	500 mV	20 µA	125 °C	100 mA	20 pF	SOT-723

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 10 V 100mA Surface Mount VESM

Technical documentation and resources