DMN1016UCB6-7

Obsolete

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

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Obsolete

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	DMN1016UCB6-7

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	423 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	920 mW
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	U-WLB1510-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

N-CHANNEL ENHANCEMENT MODE MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology
Diodes Inc DMN1016UCB6-7	423 pF	20 mOhm	5.5 A	8 V	1 V	920 mW	2.5 V 4.5 V	Surface Mount	12 V	U-WLB1510-6	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical documentation and resources