NSR01F30MXT5G
ObsoleteON Semiconductor
100 MA, 30 V, LOW VF SCHOTTKY DIODE
NSR01F30MXT5G
ObsoleteON Semiconductor
100 MA, 30 V, LOW VF SCHOTTKY DIODE
Description
General part information
NSR01F30MXT5G
The NSR01F30MX Schottky barrier diode is optimized for low forward voltage applications. It is packaged in an ultra small x3DFN2 package that enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSR01F30MXT5G |
|---|---|
| Capacitance | 0.9 pF |
| Current - Average Rectified (Io) | 100 mA |
| Current - Reverse Leakage | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125 °C |
| Package / Case | 0201 (0603 Metric) |
| Package Length | 0.6 mm |
| Package Name | 2-X3DFN |
| Package Width | 0.3 mm |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) | 600 mV |
Pricing
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CAD
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Documents
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