IRFB3806PBF
ActiveMOSFET TRANSISTOR, N CHANNEL, 43 A, 60 V, 0.0126 OHM, 20 V, 4 V ROHS COMPLIANT: YES
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IRFB3806PBF
ActiveMOSFET TRANSISTOR, N CHANNEL, 43 A, 60 V, 0.0126 OHM, 20 V, 4 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFB3806PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 43 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 71 W |
| Rds On (Max) @ Id, Vgs | 15.8 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFB3806 Series
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.
Documents
Technical documentation and resources