DMHT10H032LFJ-13

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Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMHT10H032LFJ-13

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11.9 nC
Input Capacitance (Ciss) (Max) @ Vds	683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-PowerVDFN
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	V-DFN5045-12 (Type C)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

100V N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Supplier Device Package	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMHT10H032LFJ-13	Surface Mount	V-DFN5045-12 (Type C)	4 N-Channel	100 V	12-PowerVDFN	33 mOhm	11.9 nC	MOSFET (Metal Oxide)	683 pF	900 mW	2.5 V	-55 °C	150 °C	6 A

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General part information

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.