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ONSEMI ISL9V3040P3

NTP165N65S3H

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ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FAST, 650 V, 19 A, 165 MΩ, TO-220

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ONSEMI ISL9V3040P3

NTP165N65S3H

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FAST, 650 V, 19 A, 165 MΩ, TO-220

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Description

General part information

NTP165N65S3H

SUPERFET III MOSFET is ON Semiconductor’s brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provides superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III FAST MOSFET series helpsminimize various power systems and improve system efficiency.

Technical Specifications

Parameters and characteristics for this part

SpecificationNTP165N65S3H
Current - Continuous Drain (Id) (Tc)19 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)35 nC
Input Capacitance (Ciss) (Max)1808 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)142 W
Rds On (Max)165 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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