Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | 1N6263 | 1N6263 Series |
---|---|---|
- | - | |
Capacitance @ Vr, F | 2.2 pF | 2.2 pF |
Current - Average Rectified (Io) | 15 mA | 15 mA |
Current - Reverse Leakage @ Vr | 200 nA | 200 nA |
Mounting Type | Through Hole | Through Hole |
Operating Temperature - Junction [Max] | 200 C | 200 C |
Operating Temperature - Junction [Min] | -65 C | -65 C |
Package / Case | Axial, DO-35, DO-204AH | Axial, DO-35, DO-204AH |
Speed | Any Speed | Any Speed |
Speed | 200 mA | 200 mA |
Supplier Device Package | DO-35 | DO-35 |
Technology | Schottky | Schottky |
Voltage - DC Reverse (Vr) (Max) [Max] | 60 V | 60 V |
Voltage - Forward (Vf) (Max) @ If | 1 V | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
1N6263 Series
SMALL SIGNAL SCHOTTKY DIODE, SINGLE, 60 V, 15 MA, 410 MV, 50 MA, 200 C ROHS COMPLIANT: YES
Part | Capacitance @ Vr, F | Technology | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Package / Case | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics 1N6263 | |||||||||||||
STMicroelectronics 1N6263 | 2.2 pF | Schottky | 1 V | 200 nA | 200 C | -65 C | 15 mA | Axial, DO-204AH, DO-35 | Through Hole | 60 V | Any Speed | 200 mA | DO-35 |
STMicroelectronics 1N6263 |
Description
General part information
1N6263 Series
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
Documents
Technical documentation and resources