DMG7N65SJ3

Obsolete

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Obsolete

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMG7N65SJ3

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	886 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	125 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

N-CHANNEL ENHANCEMENT MODE MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Qualification	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMG7N65SJ3	25 nC	Automotive	N-Channel	Through Hole	1.4 Ohm	AEC-Q101	30 V	-55 °C	150 °C	5.5 A	MOSFET (Metal Oxide)	886 pF	125 W	4 V	IPAK TO-251-3 Short Leads TO-251AA	650 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Technical documentation and resources