TNPW2512191RBETG
ActiveVishay General Semiconductor - Diodes Division
RES 191 OHM 0.1% 1/2W 2512
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TNPW2512191RBETG
ActiveVishay General Semiconductor - Diodes Division
RES 191 OHM 0.1% 1/2W 2512
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TNPW2512191RBETG |
|---|---|
| Composition | Thin Film |
| Features | Military |
| Height - Seated (Max) [Max] [z] | 0.03 in |
| Height - Seated (Max) [Max] [z] | 0.75 mm |
| Number of Terminations | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6432 Metric |
| Package / Case | 2512 |
| Power (Watts) | 0.5 W |
| Power (Watts) | 0.5 W |
| Resistance | 191 Ohms |
| Size / Dimension [x] | 6.3 mm |
| Size / Dimension [x] | 0.248 in |
| Size / Dimension [y] | 0.122 in |
| Size / Dimension [y] | 3.1 mm |
| Supplier Device Package | 2512 |
| Temperature Coefficient | 25 ppm/°C |
| Tolerance | 0.1 % |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
TNPW2512191RBETG
191 Ohms ±0.1% 0.5W, 1/2W Chip Resistor 2512 (6432 Metric) Military Thin Film
Documents
Technical documentation and resources