UF4SC120023K4S
ActiveSILICON CARBIDE (SIC) CASCODE JFET - ELITESIC, 23 MOHM, 1200V, TO-247-4L
UF4SC120023K4S
ActiveSILICON CARBIDE (SIC) CASCODE JFET - ELITESIC, 23 MOHM, 1200V, TO-247-4L
Description
General part information
UF4SC120023K4S Series
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads
Technical Specifications
Parameters and characteristics for this part
| Specification | UF4SC120023K4S |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 53 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 37.8 nC |
| Input Capacitance (Ciss) (Max) | 1430 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4 |
| Power Dissipation (Max) | 385 W |
| Rds On (Max) | 29 mOhm |
| Technology | SiCFET (Cascode SiCJFET) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 6 V |
Pricing
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