S8GC R7G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 8A DO214AB

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 8A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S8GC R7G

Capacitance @ Vr, F	48 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	985 mV

Part	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Speed	Speed	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation S8GC	48 pF	10 µA	Standard	DO-214AB SMC	400 V	150 °C	-55 °C	DO-214AB (SMC)	8 A	Surface Mount	Standard Recovery >500ns	200 mA
Taiwan Semiconductor Corporation S8GC R7G	48 pF	10 µA	Standard	DO-214AB SMC	400 V	150 °C	-55 °C	DO-214AB (SMC)	8 A	Surface Mount		200 mA 500 ns	985 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 8A Surface Mount DO-214AB (SMC)

Technical documentation and resources