TN2106N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 2.5 OHM
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TN2106N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 2.5 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN2106N3-G | TN2106 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 300 mA |
| Drain to Source Voltage (Vdss) | - | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5 - 10 V |
| FET Type | - | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 50 pF |
| Mounting Type | - | Through Hole |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | - | 740 mW |
| Rds On (Max) @ Id, Vgs | - | 2.5 Ohm |
| Supplier Device Package | - | TO-92-3 |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 0.68 | |
| 25 | $ 0.56 | |||
| 100 | $ 0.52 | |||
| Microchip Direct | BAG | 1 | $ 0.68 | |
| 25 | $ 0.56 | |||
| 100 | $ 0.52 | |||
| 1000 | $ 0.43 | |||
| 5000 | $ 0.38 | |||
| 10000 | $ 0.36 | |||
TN2106 Series
MOSFET, N-Channel Enhancement-Mode, 60V, 2.5 Ohm
| Part | Technology | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN2106K1-G | |||||||||||||||
Microchip Technology TN2106N3-G | |||||||||||||||
Microchip Technology TN2106N3-G | MOSFET (Metal Oxide) | 60 V | TO-226-3, TO-92-3 | 20 V | 740 mW | 2 V | Through Hole | 4.5 V, 10 V | 50 pF | TO-92-3 | N-Channel | 300 mA | -55 °C | 150 °C | 2.5 Ohm |
Description
General part information
TN2106 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources