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NTMYS1D2N04CLTWG

NTMYS1D2N04CLTWG

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ON Semiconductor

POWER MOSFET 40 V, 1.1 MOHMS, 258 A, SINGLE N-CHANNEL

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NTMYS1D2N04CLTWG

NTMYS1D2N04CLTWG

Active
ON Semiconductor

POWER MOSFET 40 V, 1.1 MOHMS, 258 A, SINGLE N-CHANNEL

Find alt

Description

General part information

NTMYS1D2N04CLTWG

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMYS1D2N04CLTWG
Current - Continuous Drain (Id) (Ta)44 A
Current - Continuous Drain (Id) (Tc)258 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)109 nC
Input Capacitance (Ciss) (Max)6330 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case4-LFPAK, SOT-1023
Package Length5 mm
Package NameLFPAK4
Package Width6 mm
Power Dissipation (Max)3.9 W, 134 W
Rds On (Max)1.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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